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MMBT5401
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
FEATURES
* Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram
1 BASE
SOT-23
COLLECTOR 3
MECHANICAL DATA
* * * * *
0.055(1.40)
2 EMITTER
0.006(0.15) 0.003(0.08)
0.047(1.20)
0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00)
0.020(0.50) 0.012(0.30)
0.100(2.55) 0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
0.019(2.00) 0.071(1.80)
1
3 0.110(2.80) 2
0.118(3.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (@ TA = 25OC unless otherwise noted) RATINGS
Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C
o
O
SYMBOL PD TJ TSTG
VALUE 300 150 -55 to +150
UNITS mW
o o
Max. Operating Temperature Range Storage Temperature Range
C C
ELECTRICAL CHARACTERISTICS (@ TA = 25OC unless otherwise noted) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL R qJA MIN. TYP. MAX. 417 UNITS
o
C/W
2007-5
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = -1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -100uAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10uAdc, I C = 0) Collector Cutoff Current (V CB = -120Vdc,IE=0) (V CE = -120Vdc, IE=0, TA= 100 OC) V(BR)CEO V(BR)CBO V(BR)EBO ICES -150 -160 -5.0 -50 -50 Vdc Vdc Vdc nAdc uAdc
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain (I C = -1.0mAdc, V CE = -5.0Vdc) (I C = -10mAdc, V CE = -5.0Vdc) (I C = -50mAdc, V CE = -5.0Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10Adc, I B =-1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) VCE(sat) hFE 50 60 50 240 -0.2 -0.5 -1.0 -1.0 Vdc -
VBE(sat)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -10Vdc, f= 100MHz) Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Small-Signal Current Gain (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) Noise Figure (V CE = -5.0Vdc, I C = -200uAdc, RS=10W, f= 1.0kHz) fT Cobo hfe NF 100 40 300 6.0 200 8.0 MHz pF dB
RATING AND CHARACTERISTICS CURVES ( MMBT5401 )
200 150 hFE, CURRENT GAIN 100 70 50
-55 C
O
TJ=125 C 25 C
O
O
30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
VCE = -1.0V VCE = -5.0V
20
30
50
100
Figure 1. DC Current Gain
1.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IC = 1.0 mA 10 mA 30 mA 100 mA
IC, COLLECTOR CURRENT (mA)
Figure 2. Collector Saturation Region
103 IC, COLLECTOR CURRENT (uA) 102 101 100 10-1 10-2 10-3 VCE= 30V IC=ICES
TJ=125 C 75 C
O O
IB, BASE CURRENT (mA)
1.0 0.9 0.8 V, VOLTAGE (V) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1
TJ=25 C
O
VBE(sat) @ IC/IB = 10
REVERSE O 25 C
FORWARD
VCE(sat) @ IC/IB = 10
0.3
0.2
0.1
0.2 0.3 0.5
1.0
2.0 3.0
5.0 10
20 30
50 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Cut-Off Region
Figure 4. "On" Voltages
RATING AND CHARACTERISTICS CURVES ( MMBT5401 )
QV, TEMPERATURE COEFFICIENT (mV/ C) 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 QVB for VBE(sat) QVC for VCE(sat) C, CAPACITANCE (pF) TJ = -55 Cto 135 C
O O
100 70 50 30 20 10 7.0 5.0 3.0 2.0 Cibo
TJ =25 C
O
O
Cobo
0.2 0.3 0.5
1.0
2.0 3.0 5.0 10
20 30 50 100
1.0 0.2 0.3 0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
Figure 5.Temperature Coefficients
1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC/IB = 10 O TJ =25 C 2000
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 6.Capacitances
1000 700 500 t, TIME (ns) 300 200 100 70 50 30 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
tr @ VCC = 120V tr @ VCC = 30V
IC/IB = 10 O TJ =25 C tf @ VCC = 30 V
tf @ VCC = 120V
ts @ VCC = 120V
td @ VBE(off) = 1.0 V
VCC= 120 V 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 7.Turn-On Time
IC, COLLECTOR CURRENT (mA)
Figure 8.Turn-Off Time
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.

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